1500 w low clamping fact or transient volt age suppressor scottsd a l e division 1n6356 thru 1n6372 or mpt-5 thru mpt-45c w w w . mi c r o s e m i . c o m 1n6 356 thru 1n6 372 mpt-5 th ru mpt-45c descripti on appeara n c e this t r an sien t voltage suppre s sor (tvs) se rie s for 1 n 63 56 thru 1 n 63 72 ar e jede c regist ered sel e ctio ns fo r both u n id ire c tion al and bi dire ctio nal devi c e s . the 1 n 63 56 thru 1 n 6 364 a r e uni dire ctio nal and th e 1 n 63 65 thru 1 n 63 72 a r e bi-di r e c tional whe r e th ey al l provid e a very lo w spe c i f ied cl ampin g factor for minimal cla m ping voltage s (v c ) above their re sp ectiv e brea kd own voltages (v br ) as spe c ified herein. they are m o st often used in prote c ting sen s itive comp one nts from inductive switchin g transi ents or indu ced seconda ry lightning effects as found in lower surg e levels of ie c61 000 -4 -5 . they are also very succe ssful in p r otecting ai rb orne avio nics and ele c trical system s. since thei r resp on se tim e is virtually instanta neo u s , they ca n also prote c t from esd an d eft per iec61 000 -4 -2 a nd iec610 00 -4-4. do -13 ( d o - 20 2a a) import a n t : f o r the most cur r e n t data, consult mi c r os e m i ? s w e bsite: http:// www .microsemi.com features a p p l i c at ions / be ne fi ts ? unid irecti ona l and b i dir e ctio n a l t vs series for thru-ho l e mounti ng ? suppr esses tra n sie n ts up to 1 500 w a tts @ 1 0 /100 0 s ? t cl am pi ng (0 volts to v (b r) min): unidir ection al ? less than 1 00 pic o seco nd s. bidirectio nal ? less tha n 5 nan o secon d s. ? w o rking vo ltag e (v wm ) range 5 v to 45 v ? lo w cl ampi ng factor (ratio of a c tual v c /v br ): 1.33 @ full rated p o w e r and 1.20 @ 5 0 % rated p o w e r ? hermetic se ale d do-13 metal packa ge ? options for screen ing i n accor danc e w i th mil - prf - 195 00 for jan, jan t x, jant xv, an d jans are als o avai lab l e b y add in g mq, mx, mv, msp prefi x es res pec tivel y t o part numb e rs, e.g. mx1 n 6 356, et c. ? surface mou n t equ ival ent pac kages a l so av a ilab l e as smcj63 56 ? s m cj63 72 (con sult factor y for other surface mou n t optio ns) ? plastic a x i a l-l e ade d eq uiva le n t s availa ble i n the 1n6 373 ? 1n6 389 ser i es (se e separ ate dat a sheet) ? desig n e d to pr otect bipol ar a nd mos microprocess o r base d s y stems . ? protection from s w itch in g tran sients an d in du ced rf ? esd and ef t protectio n per i e c 610 00- 4-2 and -4- 4 ? secon dar y li gh tning pr otectio n per iec61 0 0 0 -4-5 w i t h 42 ohms sourc e impe danc e: class 1, 2 & 3 1n63 56 to 1n63 72 class 4: 1n6 356 to 1 n 6 362 ? secon dar y li gh tning pr otectio n per iec61 0 0 0 -4-5 w i t h 12 ohms sourc e impe danc e: class 1 & 2: 1n635 6 to 1n6 372 class 3: 1n63 56 to 1n 636 2 class 4: 1n63 56 to 1n 635 8 ? secon dar y li gh tning pr otectio n per iec61 0 0 0 -4-5 w i t h 2 ohms source imped ance: class 2: 1n6 356 to 1 n 6 361 class 3: 1n6 356 to 1 n 6 358 ? inhere n tl y r adi ation h a rd p e r microsemi micr onote 050 max i mu m rat ing s mechan ic al an d pa ckagin g ? 150 0 w a tts for 10/10 00 s w i th repetition rate of 0.01% or less* at lead te mperatur e (t l ) 25 o c (see f i gs . 1, 2, & 4) ? operatin g & storag e t e mperatures: -65 o to +175 o c ? t h ermal resis t ance: 50 o c/w junction to lead at 0.375 i n ch es (10 mm) from bod y or 11 0 o c/w junction to ambi ent w h e n mounte d on f r 4 pc bo ard w i th 4 mm 2 copp er pa ds (1 oz) and track w i dth 1 mm, le ngth 25 mm ? dc po w e r d i ss ipati o n * : 1 watt at t l < + 125 o c 3/8? or 10 mm from bod y (also se e f i gur e 5) ? f o r w a r d sur ge current: 200 a m ps for 8.3ms half-si ne w a ve at t a = + 2 5 o c fo r u n i d i re cti o na l on ly (1n 6 35 6 - 63 64 ) ? sold er t e mperatures: 260 o c for 10 s (max i m u m) ? case: do-13 (do-202aa), w e ld ed, herm e ticall y seal ed metal a nd gl ass ? f i nish: all external meta l su rfaces are t i n-lea d plate d an d sold erab le per mil- st d-750 method 202 6 ? polarit y : c a thod e con nec ted to case an d pol arit y ind i cat ed b y di od e s y mbol ? marking: part number an d pol arit y dio de s y mb ol ? w e igh t : 1.4 grams. (appro x ) ? t ape & reel optio n: standa rd per eia-296 (add ?t r? suffix to part number) ? see pack a g e d i mensi on o n la st page * t vs devices are not t y p i cal l y us ed for dc p o w e r d i ssip a tio n and ar e inste ad op erate d at or less than th eir rated stan d o ff volta ge (v wm ) excep t for transients that briefl y dr iv e the devic e int o aval anc he br eakd o w n (v br to v c regi on). m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 1 cop y right ? 200 2 11-06- 2003 rev a
1500 w low clamping fact or transient volt age suppressor scottsd a l e division 1n6356 thru 1n6372 or mpt-5 thru mpt-45c w w w . mi c r o s e m i . c o m 1n6 356 thru 1n6 372 mpt-5 th ru mpt-45c elec tric al ch ara cteri s tic s @ 25 o c (unidirectio nal) microsemi p a rt nu m b er st a nd- of f vo lt a g e (no t e 1) v wm vo lts ma x i m u m reverse le a k a g e @v wm i d a minimum* bre a k d o wn vo lt a g e @ 1.0 m a v (br) (min ) vo lts ma x i m u m cl a m pin g vo lt a g e (fig. 2) i pp 1 = 1 a v c vo lts ma x i m u m cl a m pin g vo lt a g e (fig. 2) @ i pp 2 = 10 a v c vo lts ma x i m u m pe a k p u lse curren t i pp 3 a 1n6356 1n6357 1n6358 1n6359 1n6360 mpt-5 mpt-8 mpt-10 mpt-12 mpt-15 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.3 13.7 16.1 20.1 7.5 11.5 14.1 16.5 20.6 160 100 90 70 60 1n6361 1n6362 1n6363 1n6364 mpt-18 mpt-22 mpt-36 mpt-45 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.2 29.8 50.6 63.3 25.2 32.0 54.3 70.0 50 40 23 19 v f at 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine w a v e . elec tric al ch ara cteri s tic s @ 25 o c ( b idirection a l) 1n6365 1n6366 1n6367 1n6368 mpt-5c MPT-8C mpt-10c mpt-12c mpt-15c 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.4 14.1 16.7 20.8 7.5 11.6 14.5 17.1 21.4 160 100 90 70 60 1n6369 1n6370 1n6371 1n6372 mpt-18c mpt-22c mpt-36c mpt-45c 18.0 22.0 3 6 . 0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.8 30.8 50.6 63.3 25.5 32.0 54.3 70.0 50 40 23 19 c suffix indicates bidirectional note 1: tvs d e vices are norma lly selected a ccor d ing to the reve r s e ?stand of f voltage? (v wm ) w h ich should be equa l to or great er tha n the dc o r continuous peak operating voltage level. * the minimum breakdo w n volta ge as shown tak e s i n t o c o n s i d e r a t i o n t h e + volt tolerance norm a ll y specified for power suppl y r egulation on most integrated c i rcuit manufactur e rs data sheets. similar dev ices a r e available w i th reduced clamping voltages w h e r e tighter regulate d po w e r suppl y voltages are emplo y ed. graphs figu re 1 figu re 2 peak pulse power vs. pulse time t y pical characte ristic clamping v o ltage vs. peak pulse c u rrent m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 2 cop y right ?
1500 w low clamping fact or transient volt age suppressor m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 3 cop y right ? w w w . mi c r o s e m i . c o m scottsd a l e division 1n6356 thru 1n6372 or mpt-5 thru mpt-45c 1n6 356 thru 1n6 372 mpt-5 th ru mpt-45c pulse current (i p ) in percent of i pp peak val u e i pp p u l s e t i m e d u r at i o n ( t p) is defined a s tha t po in t w here i p de cay s to 50% of pea k v a lue (i pp ). time (t) in millise c onds figu re 4 figu re 3 t y pical capacita n ce vs. breakdow n v o ltage pulse w a ve for m for exponential surge (unidirectional t y pes) pac k ag e dim e n s io ns figu re 5 t y pical capacita n ce vs. breakdow n v o ltage (bidirectional t y pes) stead y -sta te p ow er dissi p at i o n ( wa t t s ) fig. 5 stead y-st ate po w e r derati ng curve t l ? l ead tem p er ature o c
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